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35 W GaN solid-state driver power amplifier for L-band radar applications
V. Ratnaparkhi,
Published in Springer Verlag
Volume: 673
Pages: 1 - 7
In this paper, 35 W driver power amplifier was designed and simulated using GaN HEMT for L-band radar. GaN HEMT is used because it can provide high output power and high gain as compared to other semiconductor technologies. The 35 W output power is generated using CGHV40030 GaN HEMT which is sufficient to drive further stages of power amplifier. The driver amplifier is designed at 1.3 GHz of center frequency. This amplifier is designed in class AB and 60.5% of PAE is achieved. © 2018, Springer Nature Singapore Pte Ltd.
About the journal
JournalData powered by TypesetAdvances in Intelligent Systems and Computing
PublisherData powered by TypesetSpringer Verlag